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GaN Gallium Nitride High-Frequency Power Device Design (GaN-HF) is an emerging semiconductor technology. It is based on Gallium Nitride (GaN) and Gallium Arsenide (GaAs). GaN has unique characteristics such as high power density, high reliability, and low cost. It can efficiently convert electric energy into high-frequency high-power for powering next-generation electronic devices. Its low loss and high efficiency make GaN ideal for high-power,
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